Identification of F impurities in F-doped ZnO by synchrotron X-ray absorption near edge structures

Author:

Na-Phattalung Sutassana1ORCID,Limpijumnong Sukit234,Min Chul-Hee5,Cho Deok-Yong6,Lee Seung-Ran7,Char Kookrin7ORCID,Yu Jaejun8ORCID

Affiliation:

1. Department of Basic Science and Physical Education, Faculty of Science at Si Racha, Kasetsart University, Si Racha Campus, Chonburi 20230, Thailand

2. School of Physics and NANOTEC-SUT Center of Excellence on Advanced Functional Nanomaterials, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand

3. Thailand Center of Excellence in Physics (ThEP Center), Commission on Higher Education, Bangkok 10400, Thailand

4. Synchrotron Light Research Institute, Nakhon Ratchasima 30000, Thailand

5. Experimentelle Physik VII and Röntgen Research Center for Complex Materials, Universität Würzburg, 97074 Würzburg, Germany

6. IPIT and Department of Physics, Chonbuk National University, Jeonju 54896, South Korea

7. Department of Physics and Astronomy, Institute of Applied Physics, Seoul National University, Seoul 08826, South Korea

8. Center for Theoretical Physics, Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea

Funder

Faculty of science at Si Racha, Kasetsart University, Si Racha campus

Thailand Center of Excellence in Physics (ThEP Center)

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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1. Design Principles of p-Type Transparent Conductive Materials;ACS Applied Materials & Interfaces;2019-04-17

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