Heterodyne detection of radio-frequency electric fields using point defects in silicon carbide-Reference-Cited by-同舟云学术

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Heterodyne detection of radio-frequency electric fields using point defects in silicon carbide

Published:2019-07-22 Issue:4 Volume:115 Page:043105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wolfowicz Gary¹²^ORCID,Anderson Christopher P.¹³^ORCID,Whiteley Samuel J.¹³,Awschalom David D.¹²³^ORCID

Affiliation:

1. Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA

2. Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA

3. Department of Physics, University of Chicago, Chicago, Illinois 60637, USA

Funder

Division of Materials Research

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5108913

Reference20 articles.

1. Spin–phonon interactions in silicon carbide addressed by Gaussian acoustics

2. Fluorescence thermometry enhanced by the quantum coherence of single spins in diamond

3. Nanometre-scale thermometry in a living cell

4. Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins

5. Nanoscale Detection of a Single Fundamental Charge in Ambient Conditions Using theNV−Center in Diamond

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