Characteristics of SiO2/n-GaN interfaces with β-Ga2O3 interlayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1629371
Reference18 articles.
1. Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors
2. Properties of Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3])/GaN metal–insulator–semiconductor diodes
3. Thermally oxidized GaN film for use as gate insulators
4. GaN metal–oxide–semiconductor structures using Ga-oxide dielectrics formed by photoelectrochemical oxidation
5. Bias-assisted photoelectrochemical oxidation of n-GaN in H2O
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