State coupling effects in GaAs/InGaAs/AlGaAs modulation doped quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362942
Reference5 articles.
1. Principle differences between the transport properties of normal AlGaAs/InGaAs/GaAs and inverted GaAs/InGaAs/AlGaAs modulation doped heterostructures
2. Photoluminescence characterization of gated pseudomorphic AlGaAs/InGaAs/GaAs modulation‐doped field‐effect transistors
3. Fermi-energy-edge singularity in quantum wells containing more than one occupied subband
4. Free electron distribution in δ‐doped InGaAs/AlGaAs pseudomorphic high electron mobility transistor structures
5. Observation of a Many-Body Edge Singularity in Quantum-Well Luminescence Spectra
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells;Bulletin of Materials Science;2011-12
2. Low temperature electron magnetotransport in InxGa1-xAs/In0.52Al0.48As quantum wells with high electron density;Journal of Physics: Conference Series;2009-02-01
3. Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier;Semiconductor Science and Technology;2007-01-19
4. Dependence of the electronic parameters on the InyGa1−yAs quantum well width in modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs strained single quantum wells;Applied Surface Science;2005-02
5. Strain effect and carrier density in modulation-doped AlxGa1 -xAs/InyGa1 -yAs/GaAs step quantum wells with an embedded potential barrier;Journal of Materials Science Letters;2003-12
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