Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1362339
Reference11 articles.
1. MOCVD growth of high efficiency current-matched tandem solar cell
2. Epitaxial growth of stoichiometric (100) GaAs at 75 °C
3. Crystal growth of high quality hybrid GaAs heteroepitaxial layers on Si substrate by metalorganic chemical vapor deposition and liquid phase epitaxy
4. Elimination of thermally induced biaxial stress in GaAs on Si layers by post‐growth patterning
5. Stress reduction and structural quality improvement due to In doping in GaAs/Si
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