Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor-Reference-Cited by-同舟云学术

Dislocation distribution across ultrathin silicon-on-insulator with epitaxial SiGe stressor

Published:2013-07-29 Issue:5 Volume:103 Page:053104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bonera Emiliano,Gatti Riccardo,Isella Giovanni,Norga Gerd,Picco Andrea,Grilli Emanuele,Guzzi Mario,Texier Michaël,Pichaud Bernard,von Känel Hans,Miglio Leo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4817071

Reference20 articles.

1. Frontiers of silicon-on-insulator

2. Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

3. New approach to grow pseudomorphic structures over the critical thickness

4. Relaxation of SiGe thin films grown on Si/SiO2substrates

5. SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study

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