Enhancement of optical nonlinearity inp‐type semiconductor quantum wells due to confinement and stress
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95483
Reference17 articles.
1. Dynamic non-linear optical processes in semiconductors
2. Theory of Optical Mixing by Mobile Carriers in Semiconductors
3. Theory of optical mixing by mobile carriers in superlattices
4. Theory of optical mixing by mobile carriers in superlattices
5. Corrections to enhanced optical nonlinearity of superlattices
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1. Effects of valence-band mixing and strain on thermoelectric properties of p-type quantum wells;Journal of Applied Physics;2013-03-21
2. Strain dependence of valence band structure and intersubband transitions in coupled quantum wells;Superlattices and Microstructures;1996-06
3. Clusterization and contrast enhancement with light propagation in a bundle of nonlinear coupled fibres;Chaos, Solitons & Fractals;1994-08
4. Conduction-band and valence-band structures in strainedIn1−xGaxAs/InP quantum wells on (001) InP substrates;Physical Review B;1993-09-15
5. Band-edge hole mass in strained-quantum-well structures;Physical Review B;1991-06-15
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