The use of the electron‐beam‐induced current mode of the SEM for observing emitter/collector pipes in bipolar transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326341
Reference9 articles.
1. Emitter-collector shorts in bipolar devices
2. Influence of dislocations on properties of shallow diffused transistors
3. Mapping of electrical leakage in transistors by anodic oxidation
4. Cathodic Mapping of Leakage Defects
5. Diffusion Pipes in Silicon NPN Structures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron Beam Testing;Advances in Electronics and Electron Physics;1989
2. Detecting microscopic superconducting domains;Journal of Physics E: Scientific Instruments;1988-09
3. Electron-Beam-Induced Currents in Semiconductors;Annual Review of Materials Science;1981-08
4. A study of diffused bipolar transistors by electron microscopy;Solid-State Electronics;1980-09
5. SEM and TEM observations of emitter-collector pipes in bipolar transistors;Journal of Microscopy;1980-03
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