Observation of free excitons in room‐temperature photoluminescence of GaAs/AlGaAs single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99847
Reference14 articles.
1. Electric-field dependence of linear optical properties in quantum well structures: Waveguide electroabsorption and sum rules
2. Free excitons in room-temperature photoluminescence of GaAs-AlxGa1−xAsmultiple quantum wells
3. Room‐temperature photoluminescence times in a GaAs/AlxGa1−xAs molecular beam epitaxy multiple quantum well structure
4. Carrier trapping in room‐temperature, time‐resolved photoluminescence of a GaAs/AlxGa1−xAs multiple quantum well structure grown by metalorganic chemical vapor deposition
5. Recombination dynamics in GaAs/Al<inf>x</inf>Ga<inf>1- x</inf>As quantum well structures
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1. Investigation of the electro-optical characteristics of GaAs/AlGaAs multiple quantum well grown by metal-organic vapor phase epitaxy;Journal of Molecular Structure;2023-01
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3. Asymmetrically strained quantum dots with non-fluctuating single-dot emission spectra and subthermal room-temperature linewidths;Nature Materials;2019-01-07
4. Influence of Rapid Thermal Annealing on Carrier Dynamics in GaInNAs/GaAs Multiple Quantum Wells;Chinese Physics Letters;2011-11
5. Peculiar Temperature-Power Dependence of AlGaAs/GaAs Multi Quantum Well;Journal of Nanoscience and Nanotechnology;2011-07-01
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