InGaAsPn‐channel inversion‐mode metal‐insulator‐semiconductor field‐effect transistor with low interface state density
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328582
Reference29 articles.
1. n-channel inversion-mode InP m.i.s.f.e.t.
2. Microwave gain from an n-channel enhancement-mode InP m.i.s.f.e.t.
3. Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
4. Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique
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