Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices-Reference-Cited by-同舟云学术

Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices

Published:2010-07-05 Issue:1 Volume:97 Page:012108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Podolska Anna,Kocan Martin,Cabezas Alex M. Garces,Wilson Timothy D.,Umana-Membreno Gilberto A.,Nener Brett D.,Parish Giacinta,Keller Stacia,Mishra Umesh K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3462323

Reference14 articles.

1. GaN-based heterostructures for sensor applications

2. GaN: Processing, defects, and devices

3. III–nitrides: Growth, characterization, and properties

4. pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

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