Electric field enhancement of the superconducting spin-valve effect via strain-transfer across a ferromagnetic/ferroelectric interface

Author:

Kikuta Tomohiro1ORCID,Komori Sachio1ORCID,Imura Keiichiro12ORCID,Taniyama Tomoyasu1ORCID

Affiliation:

1. Department of Physics, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan

2. Institute of Liberal Arts and Sciences, Nagoya University 2 , Nagoya 464-8601, Japan

Abstract

In a ferromagnet/superconductor/ferromagnet (F/S/F) superconducting spin-valve (SSV), a change in the magnetization alignment of the two F layers modulates the critical temperature (Tc) of the S layer. The Tc-switching effect (the SSV effect) is based on the interplay between superconductivity and magnetism. The fast and large resistive switching associated with Tc-switching is suitable for nonvolatile cryogenic memory applications. However, the external magnetic field-based operation of SSVs is hindering their miniaturization, and therefore, electric field control of the SSV effect is desired. Here, we report epitaxial growth of a La0.67Ca0.33MnO3/YBa2Cu3O7/La0.67Ca0.33MnO3 SSV on a piezo-electric [Pb(Mg0.33Nb0.67)O3]0.7-[PbTiO3]0.3 (001) substrate and demonstrate electric field control of the SSV effect. Electric field-induced strain-transfer from the piezo-electric substrate increases the magnetization and Tc of the SSV and leads to an enhancement of the magnitude of Tc-switching. The results are promising for the development of magnetic-field-free superconducting spintronic devices, in which the S/F interaction is not only sensitive to the magnetization alignment but also to an applied electric field.

Funder

Core Research for Evolutional Science and Technology

Japan Society for the Promotion of Science

Fusion Oriented REsearch for Disruptive Science and Technology

Publisher

AIP Publishing

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