Strained interface layer contributions to the structural and electronic properties of epitaxial V2O3 films
Author:
Affiliation:
1. Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland
2. Industrial Focus Group XUV Optics, MESA+ Institute of Nanotechnology, University of Twente, 7522 NH Enschede, The Netherlands
Funder
Icelandic Research Fund
Icelandic Student Innovation Fund
University of Iceland Research Fund
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0043941
Reference22 articles.
1. Metal-Insulator Transition in(V1−xCrx)2O3
2. Overcoming the thermal regime for the electric-field driven Mott transition in vanadium sesquioxide
3. Evidence of the metal-insulator transition in ultrathin unstrained V2O3 thin films
4. Influence of strain on the electronic properties of epitaxial V2O3 thin films
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3. Reversible exchange bias in epitaxial V2O3/Ni hybrid magnetic heterostructures;Journal of Physics: Condensed Matter;2022-10-21
4. Structural and magnetic characterization of epitaxial $\mathrm{V}_{2}\mathrm{O}_{3}/\text{Ni}_{80}\text{Fe}_{20}$ hybrid magnetic structures;2022 International Semiconductor Conference (CAS);2022-10-12
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