Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak‐to‐valley ratios at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102626
Reference12 articles.
1. Resonant tunneling in semiconductor double barriers
2. Large room‐temperature effects from resonant tunneling through AlAs barriers
3. Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures
4. A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
5. Observation of resonant tunneling through GaAs quantum well states confined by AlAsX‐point barriers
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