Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis-Reference-Cited by-同舟云学术

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Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis

Published:2002 Issue:10 Volume:91 Page:6388
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Zhang Y.,Weber W. J.,Jiang W.,Hallén A.,Possnert G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference30 articles.

1. Silicon carbide: synthesis and processing

2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

3. Silica films on silicon carbide: a review of electrical properties and device applications

4. Recent Advances in SiC Power Devices

5. Physical Properties of SiC

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1. Depth profiling of the Si ion implantation induced disorder and strain in 4H-SiC and the thermal annealing recovery;Applied Surface Science;2024-08

2. Ion irradiation induced blister formation and exfoliation in 3C-SiC;Applied Physics A;2024-07-22

3. Irradiation performance of high entropy ceramics: A comprehensive comparison with conventional ceramics and high entropy alloys;Progress in Materials Science;2024-06

4. Investigations on ion irradiation induced strain and structural modifications in 3C–SiC;Materials Science in Semiconductor Processing;2024-04

5. Review on Modeling and Mitigation of Bipolar Degradation in 4H-SiC;Power Electronic Devices and Components;2024-04

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