Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds-Reference-Cited by-同舟云学术

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Disorder-induced structural transitions in topological insulating Ge-Sb-Te compounds

Published:2015-05-21 Issue:19 Volume:117 Page:195701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim Jeongwoo¹,Jhi Seung-Hoon¹

Affiliation:

1. Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea

Funder

IT R&D program of MKE/KEIT Korea

NRL program of MOST/KOSEF

SRC Center for Topological Matter

Korea Institute of Science and Technology Information (KISTI)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921294

Reference34 articles.

1. Phase-change materials for rewriteable data storage

2. Reversible Electrical Switching Phenomena in Disordered Structures

3. Low-cost and nanoscale non-volatile memory concept for future silicon chips

4. An optoelectronic framework enabled by low-dimensional phase-change films

5. Resonant bonding in crystalline phase-change materials

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1. Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials;Advanced Functional Materials;2024-07-16

2. Solid-phase equilibria in the GeBi2Te4-Bi2Te3-Te system and thermodynamic properties of compounds of the GeTe·mBi2Te3 homologous series;Physics and Chemistry of Solid State;2022-01-27

3. Topologically Nontrivial Phase-Change Compound GeSb2Te4;ACS Nano;2020-07-06

4. Intermixing suppression through the interface in GeTe/Sb2Te3 superlattice;Applied Physics Express;2020-06-05

5. In situ study of vacancy disordering in crystalline phase-change materials under electron beam irradiation;Acta Materialia;2020-04

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