Fluorine in low‐pressure chemical vapor deposited W/Si contact structures: Inclusion and thermal stability
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97811
Reference9 articles.
1. Selective Low Pressure Chemical Vapor Deposition of Tungsten
2. Selective deposition of tungsten—prediction of selectivity
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4. Changes in Resistivity and Composition of Chemical Vapor Deposited Tungsten Silicide Films by Annealing
5. Detection of fluorine through the 19F(p, αγ)16O reaction
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1. Mutual deactivation of electrically active F interstitials and O vacancies into fluorine-oxygen-vacancy complexes inSiO2;Physical Review B;2009-05-06
2. Formation of cobalt silicide from filter metal vacuum arc deposited films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-06
3. Metal Silicides in CMOS Technology: Past, Present, and Future Trends;Critical Reviews in Solid State and Materials Sciences;2003-11
4. Influence of hydrogen on chemical vapor deposition of tungsten on sputter‐deposited TiN layers;Applied Physics Letters;1995-11-13
5. On the Formation of Defects and Morphology during Chemical Vapor Deposition of Tungsten;Journal of The Electrochemical Society;1994-08-01
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