INFLUENCE OF OXIDATION RATE AND HEAT TREATMENT ON THE DENSITY OF SURFACE STATES IN THE Si–SiO2SYSTEM
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1754312
Reference6 articles.
1. The defect structure of grown silicon dioxide films
2. Field Effect-Capacitance Analysis of Surface States on Silicon
3. Limitations of the MOS capacitance method for the determination of semiconductor surface properties
4. On the Logarithmic Rate Law in Chemisorption and Oxidation
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Suppression of thermal interface degradation in (111) Si/SiO2 by noble gases;Applied Physics Letters;1999-03-08
2. Effect of aluminum linewidth on the annealing of fast states in MOS structures;IEEE Transactions on Electron Devices;1972-06
3. Physics of Multilayer-Gate IGFET Memories;Applied Solid State Science;1972
4. The P-channel refractory metal self-registered MOSFET;IEEE Transactions on Electron Devices;1971-10
5. Chapter 4 MOS Transistors;Semiconductors and Semimetals;1971
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