Infrared absorption of hydrogen-related defects in ammonothermal GaN
Author:
Affiliation:
1. Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland
2. Materials Department, Solid State Lighting and Energy Electronics Center, University of California, Santa Barbara, California 93106-5050, USA
Funder
Division of Materials Research (DMR)
Suomen Akatemia (Academy of Finland)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4952388
Reference25 articles.
1. History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination
2. Improved growth rates and purity of basic ammonothermal GaN
3. Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN
4. Bulk growth of gallium nitride: challenges and difficulties
5. Vacancy defects in bulk ammonothermal GaN crystals
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