Effect of point and grain boundary defects on the mechanical behavior of monolayer MoS2 under tension via atomistic simulations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4886183
Reference33 articles.
1. Few-Layer MoS2: A Promising Layered Semiconductor
2. Emerging Photoluminescence in Monolayer MoS2
3. Atomically ThinMoS2: A New Direct-Gap Semiconductor
4. Single-layer MoS2 transistors
5. Ultrasensitive photodetectors based on monolayer MoS2
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