Emission mechanisms of passivated single n-ZnO:In/i-ZnO/p-GaN-heterostructured nanorod light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3490652
Reference18 articles.
1. 460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer Spacing
2. Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction
3. Sensing mechanisms of Pt/β-Ga2O3/GaN hydrogen sensor diodes
4. AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN
5. White Light Emission of Monolithic Carbon-Implanted InGaN–GaN Light-Emitting Diodes
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