Direct evidence of strain transfer for InAs island growth on compliant Si substrates-Reference-Cited by-同舟云学术

Direct evidence of strain transfer for InAs island growth on compliant Si substrates

Author:

Marçal L. A. B.¹,Richard M.-I.²³,Magalhães-Paniago R.¹,Cavallo F.⁴⁵,Lagally M. G.⁵,Schmidt O. G.⁶,Schülli T. Ü.²,Deneke Ch.⁷,Malachias Angelo¹

Affiliation:

1. Universidade Federal de Minas Gerais, Av. Antonio Carlos 6627, CEP 31270-901, Belo Horizonte, Brazil

2. European Synchrotron (ESRF), ID01 beamline, CS 40220, 38043 Grenoble Cedex 9, France

3. Aix-Marseille University, IM2NP-CNRS, Faculté des Sciences de St Jérôme, 13397 Marseille, France

4. Center for High Technology Materials, University of New Mexico, 1313 Goddard St., Albuquerque, New Mexico 87106, USA

5. University of Wisconsin-Madison, 1500 Engineering Drive, Madison, Wisconsin 53706, USA

6. Institute for Integrative Nanosciences, IFW-Dresden, D-01171 Dresden, Germany

7. Laboratório Nacional de Nanotecnologia (LNNano/CNPEM), C.P. 6192, CEP 13083-970, Campinas, Brazil

Funder

Fundação de amparo a pesquisa do estado de São Paulo

Wisconsin DOE

Fundação de Amparo à Pesquisa do Estado de Minas Gerais (FAPEMIG Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference22 articles.

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