Equivalent circuit model for active‐layer photomixing: Parasitic‐free modulation of semiconductor lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100038
Reference3 articles.
1. Parasitic‐free measurement of the fundamental frequency response of a semiconductor laser by active‐layer photomixing
2. Noise equivalent circuit of a semiconductor laser diode
3. Frequency response of 1.3µm InGaAsP high speed semiconductor lasers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Measurement of gain saturation coefficient of a DFB laser for lasing mode control by orthogonal polarization light;IEEE Journal of Quantum Electronics;1991
2. Measurement of the fundamental modulation response of a semiconductor laser to millimeter wave frequencies by active‐layer photomixing;Applied Physics Letters;1989-09-04
3. The optical gain lever: A novel gain mechanism in the direct modulation of quantum well semiconductor lasers;Applied Physics Letters;1989-06-19
4. Parasitic-free modulation of semiconductor lasers;IEEE Journal of Quantum Electronics;1989-06
5. Low‐temperature measurement of the fundamental frequency response of a semiconductor laser by active‐layer photomixing;Applied Physics Letters;1989-02-13
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