An analytical drain current model for symmetric double-gate MOSFETs
Author:
Affiliation:
1. College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China
Funder
Scientific Research Funds of Huaqiao University
Sientific Research Funds for the Young Teachers of Fujian Province
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5024574
Reference22 articles.
1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
2. A Continuous, Analytic Drain-Current Model for DG MOSFETs
3. A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs
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