Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields

Author:

Nguyen T. V. A.123,Saito Y.3,Naganuma H.123ORCID,Ikeda S.123,Endoh T.12345,Endo Y.125

Affiliation:

1. Center for Science and Innovation Spintronics (Core Research Cluster), Tohoku University, Sendai 980-8577, Japan

2. Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

3. Center for Innovative Integrated Electronic Systems, Tohoku University, Sendai 980-8572, Japan

4. Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan

5. Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan

Abstract

Dynamic magnetic properties of Ta-O/Co20Fe60B20 bilayer films are strongly influenced by the oxidation condition of the Ta-O layer. The oxidation of the Ta-O layer by a slight amount of oxygen with a pressure ( POxygen) of 0.03 Pa decreases in-plane damping constant ( αIP), and increases the effective magnetization (4π Ms,eff). Then, both αIP and 4π Ms,eff maintain their values by increasing POxygen up to 0.3 Pa. The out-of-plane damping constant ( αOP) showed a similar tendency to that of αIP against POxygen, although αOP is much smaller than αIP in every POxygen. αOP reaches to 0.0033 for sample oxidized at 0.03 Pa. It was suggested that αIP consists of both the intrinsic damping and the extrinsic damping, while αOP is closer to the intrinsic damping. The control of αOP and αIP by the oxidation would be beneficial in designing the high frequency spintronic devices.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference29 articles.

1. H. Honjo, T. V. A. Nguyen, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. Ma, H. Koike, Y. Takahashi, K. Furuya, H. Shen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, in 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA (IEEE, 2019), pp. 28.5.1–28.5.4.

2. K. Garello, F. Yasin, H. Hody, S. Couet, L. Souriau, S. H. Sharifi, J. Swerts, R. Carpenter, S. Rao, W. Kim, J. Wu, K. K. V. Sethu, M. Park, N. Jossart, D. Crotti, A. Furnemont, P. Gambardella, and G. S. Kar, in 2019 Symposium on VLSI Circuits Digest of Technical Papers, 2019, p. T194.

3. Experimental Demonstration of a Spin Logic Device with Deterministic and Stochastic Mode of Operation

4. A conductive topological insulator with large spin Hall effect for ultralow power spin–orbit torque switching

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