Current injection efficiency of InGaAsN quantum-well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1852697
Reference48 articles.
1. Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers
2. A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers
3. Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers
4. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
5. Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m
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