Micromechanical field-effect transistor terahertz detectors with optical interferometric readout-Reference-Cited by-同舟云学术

Micromechanical field-effect transistor terahertz detectors with optical interferometric readout

Published:2023-08-01 Issue:8 Volume:13 Page:
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:

Author:

Ryzhii V.¹^ORCID,Tang C.¹²^ORCID,Otsuji T.¹^ORCID,Ryzhii M.³^ORCID,Kalenkov S. G.⁴,Mitin V.⁵^ORCID,Shur M. S.⁶^ORCID

Affiliation:

1. Research Institute of Electrical Communication, Tohoku University 1 , Sendai 980-8577, Japan

2. Frontier Research Institute for Interdisciplinary Sciences, Tohoku University 2 , Sendai 980-8578, Japan

3. Department of Computer Science and Engineering, University of Aizu 3 , Aizu-Wakamatsu 965-8580, Japan

4. Optoelectronics Department, Moscow Polytechnic University 4 , Moscow 107023, Russia

5. Department of Electrical Engineering, University at Buffalo, SUNY 5 , Buffalo, New York 14260, USA

6. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute 6 , Troy, New York 12180, USA

Abstract

We investigate the response of the micromechanical field-effect transistors (MMFETs) to the impinging terahertz (THz) signals. The MMFET uses the microcantilevers (MC) as a mechanically floating gate and the movable mirror of the Michelson optical interferometer. The MC mechanical oscillations are transformed into optical signals and the MMFET operates as the detector of THz radiation with the optical output. The combination of the mechanical and plasmonic resonances in the MMFET with the optical amplification enables an effective THz detection.

Funder

Japan Society for the Promotion of Science

RIEC Nation-Wide Collaborative Research Project, Tohoku University, Japan

US Airforce Office Scientific Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://pubs.aip.org/aip/adv/article-pdf/doi/10.1063/5.0159610/18067596/085301_1_5.0159610.pdf

Reference35 articles.

1. The resonant gate transistor;IEEE Trans. Electron Devices,1967

2. Nanoelectromechanical systems face the future;Phys. World,2001

3. Characteristics of a micromachined floating-gate high-electron-mobility transistor at 4.2 K;J. Appl. Phys.,2005

4. Strain-sensing cryogenic field-effect transistor for integrated strain detection in GaAs/AlGaAs microelectromechanical systems;Appl. Phys. Lett.,1996

5. Micromechanical cantilever magnetometer with an integrated two-dimensional electron system;Appl. Phys. Lett.,2000