Effect of capping layer on formation and magnetic properties of MnBi thin films-Reference-Cited by-同舟云学术

Effect of capping layer on formation and magnetic properties of MnBi thin films

Published:2017-12-07 Issue:21 Volume:122 Page:213904
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Quarterman P.¹,Zhang Delin¹,Schliep Karl B.²,Peterson Thomas J.³,Lv Yang¹,Wang Jian-Ping¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, USA

2. Department of Chemical and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA

3. School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455, USA

Funder

NSF through MRSEC

Rober Hartmann Endowed Chair Professorship

University of Minnesota

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5001081

Reference29 articles.

1. J. P. Wang , M. Jamali , A. Klemm Smith , and Z. Zhao , in Nanomagnetic and Spintronic Devices for Energy-Efficient Memory and Computing, edited by J. Atulasimha and S. Bandyopadhyay ( Wiley, 2016), p. 352.

2. Low-power non-volatile spintronic memory: STT-RAM and beyond

3. Erratum: Basic principles of STT-MRAM cell operation in memory arrays

4. Spin transfer in nanomagnetic devices with perpendicular anisotropy

5. A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

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