Application of real time spectroscopic ellipsometry for high resolution depth profiling of compositionally graded amorphous silicon alloy thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118972
Reference12 articles.
1. Physics of Amorphous Silicon–Carbon Alloys
2. Assessment byinsituellipsometry of composition profiles of Ga1−xAlxAs‐GaAs heterostructures x
3. Minimal-data approaches for determining outer-layer dielectric responses of films from kinetic reflectometric and ellipsometric measurements
4. Optical approaches to determine near‐surface compositions during epitaxy
5. Real-time control of HgCdTe growth by organometallic vapor phase epitaxy using spectroscopic ellipsometry
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