Characteristics of tunable Pb1−xSnx Te junction lasers in the 8–12‐μm region
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1662909
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1. The effects of substrate temperature on the optical properties of Pb1–xSnxTe films formed by molecular beam epitaxy;Physica Status Solidi (a);1989-06-16
2. Electrical transport properties of thallium-doped p-type Pb0.8Sn0.2Te thin films;Journal of Materials Science;1988-03
3. The Faraday Effect Approach to a Study of AIVBVI Narrow-Gap Semiconductor Band Structure;physica status solidi (b);1988-01-01
4. Effect of indium on the electrical transport properties of Pb0.8Sn0.2Te thin films;Materials Research Bulletin;1988-01
5. Spin splitting in narrow-gap Pb1?xSnxTe semiconductors;Soviet Physics Journal;1987-08
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