Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes-Reference-Cited by-同舟云学术

Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes

Published:2010-10-18 Issue:16 Volume:97 Page:162906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Pawlak M. A.,Kaczer B.,Kim M.-S.,Popovici M.,Tomida K.,Swerts J.,Opsomer K.,Polspoel W.,Favia P.,Vrancken C.,Demeurisse C.,Wang W.-C.,Afanas’ev V. V.,Vandervorst W.,Bender H.,Debusschere I.,Altimime L.,Kittl J. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3505323

Reference7 articles.

1. High-k dielectrics for future generation memory devices (Invited Paper)

2. Preparation and Electrical Properties ofSrTiO3Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)

3. Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

4. The compound Sr3Ti2O7and its structure

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