Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors-Reference-Cited by-同舟云学术

Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors

Published:2018-05-07 Issue:17 Volume:123 Page:174504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Long Pengyu¹,Huang Jun Z.¹,Povolotskyi Michael²,Sarangapani Prasad¹^ORCID,Valencia-Zapata Gustavo A.¹,Kubis Tillmann¹,Rodwell Mark J. W.³,Klimeck Gerhard¹

Affiliation:

1. School of Electrical and Computer Engineering, Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907, USA

2. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA

3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

Funder

National Science Foundation

Semiconductor Research Corporation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5018737

Reference37 articles.

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5. Temperature-Dependent $I$– $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Tunnel FET

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