Electronic reconstruction at the polar (111)-oriented oxide interface

Author:

Ryu S.1ORCID,Zhou H.2,Paudel T. R.3ORCID,Campbell N.4,Podkaminer J.1,Bark C. W.1ORCID,Hernandez T.4,Fong D. D.5ORCID,Zhang Y.6,Xie L.6,Pan X. Q.67,Tsymbal E. Y.4,Rzchowski M. S.3,Eom C. B.1ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706, USA

2. X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

3. Department of Physics and Astronomy, University of Nebraska, Lincoln, Nebraska 68588, USA

4. Department of Physics, University of Wisconsin, Madison, Wisconsin 53706, USA

5. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

6. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

7. Department of Materials Science and Engineering, University of California, Irvine, California 92697, USA

Abstract

Atomically flat (111) interfaces between insulating perovskite oxides provide a landscape for new electronic phenomena. For example, the graphene-like coordination between interfacial metallic ion layer pairs can lead to topologically protected states [Xiao et al., Nat. Commun. 2, 596 (2011) and A. Rüegg and G. A. Fiete, Phys. Rev. B 84, 201103 (2011)]. The metallic ion/metal oxide bilayers that comprise the unit cell of the perovskite (111) heterostructures require the interface to be polar, generating an intrinsic polar discontinuity [Chakhalian et al., Nat. Mater. 11, 92 (2012)]. Here, we investigate epitaxial heterostructures of (111)-oriented LaAlO3/SrTiO3 (LAO/STO). We find that during heterostructure growth, the LAO overlayer eliminates the structural reconstruction of the STO (111) surface with an electronic reconstruction, which determines the properties of the resulting two-dimensional conducting gas. This is confirmed by transport measurements, direct determination of the structure and atomic charge from coherent Bragg rod analysis, and theoretical calculations of electronic and structural characteristics. Interfacial behaviors of the kind discussed here may lead to new growth control parameters useful for electronic devices.

Funder

National Science Foundation

Gordon and Betty Moore Foundation

U.S. Department of Defense

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

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