Neutron damage in GaP : Zn,O light‐emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323949
Reference33 articles.
1. EFFECTS OF γ‐IRRADIATION UPON LIFETIME AND LUMINESCENCE OF GaP DIODES
2. Gamma Irradiation and Annealing Effects in Nitrogen-Doped GaAs1-xPx Green and Yellow Light-Emitting Diodes
3. Defect Centers in GaAs1−xPx Electroluminescent Diodes Due to High‐Energy Electron Irradiation
4. Efficiency degradation of GaAs1−xPx electroluminescent diodes due to high-energy electron irradiation
5. Interstitial nitrogen defects in gallium phosphide (neutron and electron irradiation)
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1. Correlation between morphology and cathodoluminescence in porous GaP;Journal of Applied Physics;2001-03
2. Damage constant and deep-level transient spectroscopy in neutron irradiated GaAsP alloys;Journal of Electronic Materials;1986-05
3. Radiation effects of 14 MeV neutrons on GaAs IREDs and optocouplers;Nuclear Instruments and Methods in Physics Research;1983-01
4. Influence of electron irradiation on the external quantum efficiency of GaP:Zn, O light-emitting diodes;Journal of Applied Spectroscopy;1980-08
5. The effect of gamma irradiation and forward bias on the 76 K electroluminescence spectrum of GaP:Zn,O;Journal of Electronic Materials;1979-05
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