High-performance field-effect transistors based on gadolinium doped indium oxide nanofibers and their application in logic gate-Reference-Cited by-同舟云学术

High-performance field-effect transistors based on gadolinium doped indium oxide nanofibers and their application in logic gate

Author:

Wang Chao¹²³,Meng You¹²³^ORCID,Guo Zidong¹²³,Shin Byoungchul⁴,Liu Guoxia¹²³,Shan Fukai¹²³^ORCID

Affiliation:

1. College of Physics, Qingdao University, Qingdao 266071, China

2. College of Electronic and Information Engineering, Qingdao University, Qingdao 266071, China

3. Lab of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071, China

4. Electronic Ceramics Center, DongEui University, Busan 614-714, Korea

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference38 articles.

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