Differences in n-type doping efficiency between Al- and Ga-ZnO films-Reference-Cited by-同舟云学术

Differences in n-type doping efficiency between Al- and Ga-ZnO films

Published:2013-04-28 Issue:16 Volume:113 Page:163709
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gabás Mercedes,Landa-Cánovas Angel,Luis Costa-Krämer José,Agulló-Rueda Fernando,González-Elipe Agustín R.,Díaz-Carrasco Pilar,Hernández-Moro Jorge,Lorite Israel,Herrero Pilar,Castillero Pedro,Barranco Angel,Ramón Ramos-Barrado José

Funder

Spanish Ministry of Science and Innovation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4803063

Reference38 articles.

1. A comprehensive review of ZnO materials and devices

2. Transparent conducting oxide semiconductors for transparent electrodes

3. Transparent conductors as solar energy materials: A panoramic review

4. Effect of different dopant elements on the properties of ZnO thin films

5. Present status of transparent conducting oxide thin-film development for Indium-Tin-Oxide (ITO) substitutes

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