Effects of Fermi pinning and quantum mechanisms on leakage current of 4H-SiC Schottky diodes
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742, USA
Funder
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0068371
Reference16 articles.
1. Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states
2. Defect-driven inhomogeneities in Ni∕4H–SiC Schottky barriers
3. Accuracy of Transfer Matrix Approaches for Solving the Effective Mass SchrÖdinger Equation
4. The work function of the elements and its periodicity
5. On the electron affinity of silicon carbide polytypes
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1. Comparison of contact metals evaporated onto monolayer molybdenum disulfide;Journal of Applied Physics;2022-12-14
2. The Schottky emission effect: A critical examination of a century-old model;Journal of Applied Physics;2022-07-14
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