Interaction of dopants with a host GaAs lattice: The case of low‐temperature grown molecular beam epitaxial GaAs(Si)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.362558
Reference35 articles.
1. Molecular beam epitaxy
2. Tin‐doping effects in GaAs films grown by molecular beam epitaxy
3. The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
4. Delta doping of III–V compound semiconductors: Fundamentals and device applications
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1. Effects of doping type and concentration on precipitation of nanometer arsenic clusters in low-temperature-grown GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2005
2. Dual accumulation and depletion behaviors of the arsenic precipitation in low-temperature-grown Be delta-doped GaAs;Applied Physics Letters;2003-01-13
3. Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy;Journal of Crystal Growth;1998-05
4. Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy;Applied Physics Letters;1998-04-20
5. The effect of substrate orientation on the properties of low temperature molecular beam epitaxial GaAs;Journal of Applied Physics;1997-09
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