Preparation ofa‐SiC:H/a‐GeC:H superlattices by dual magnetron sputtering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344144
Reference8 articles.
1. Amorphous Semiconductor Superlattices
2. Characterization of superlattices based on amorphous silicon
3. Influence of a-SiNx: H composition on transfer-doping and electron-trapping effects in a-SiNx: H/a-Si: H superlattices
4. Preparation of a-Si:H/a-Si1-xCx:H Superlattices
5. Interfacial optical absorption in TiO_2–SiO_2 multilayer coatings prepared by rf magnetron sputtering
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1. Strong dependence of IR absorption in a-SiC:H dc magnetron sputtered thin films on H2 partial pressure;Applied Surface Science;2001-03
2. Properties of amorphous ternary alloy films a-SixCyGez:H prepared by magnetron co-sputtering;Applied Surface Science;2001-01
3. Optoelectronic and structural properties of a-Ge1−xCx:H prepared by rf reactive cosputtering;Journal of Applied Physics;1998-07
4. The effects of T1 impurities on the properties of amorphous SiC:H films prepared by co-sputtering;Thin Solid Films;1996-08
5. Influence of deposition conditions on the properties of a-GeC:H and a-Ge:H films prepared by r.f. magnetron sputtering;Thin Solid Films;1995-11
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