Liquid‐phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light‐emitting diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359017
Reference20 articles.
1. 636 nm room temperature CW operation by heterobarrier blocking structure InGaAlP laser diodes
2. The growth and properties of high performance AlGalnP emitters using a lattice mismatched GaP window layer
3. Single thin-active-layer visible-spectrum In1−xGaxP1−zAsz heterostructure lasers
4. Continuous operation of visible-spectrum in<inf>1-x</inf>Ga<inf>x</inf>P<inf>1-z</inf>As<inf>z</inf>laser diodes (6280 Å, 77 K)
5. CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP Substrates
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Light-Emitting Diodes;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27
2. Current-induced persistent capacitance in Au/n-In0.08Ga0.92As0.51P0.49 Schottky contacts;Applied Physics Letters;1998-12-07
3. Semiconductor based light emitters powered by tritium;Applied Physics Letters;1997-11-03
4. Group‐VI impurity‐relatedDXcenters in In0.18Ga0.82As0.28P0.72;Journal of Applied Physics;1996-10
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