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Computational band-structure engineering of III–V semiconductor alloys

Published:2001-07-16 Issue:3 Volume:79 Page:368-370
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Geller Clint B.,Wolf Walter,Picozzi Silvia,Continenza Alessandra,Asahi Ryoji,Mannstadt Wolfgang,Freeman Arthur J.,Wimmer Erich

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1383282

Reference17 articles.

1. Good semiconductor band gaps with a modified local-density approximation

2. Generalized Kohn-Sham schemes and the band-gap problem

3. Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor

4. Theoretical prediction of the plasma frequency and moss-burstein shifts for degenerately doped InAs, In[sub 1−x]Ga[sub x]As and InP[sub 1−y]As[sub y]

5. Microwave oscillations of current in III–V semiconductors

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