Properties of GaP Green‐Light‐Emitting Diodes Grown by Liquid‐Phase Epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655918
Reference21 articles.
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Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Products of Optoelectronic Devices;Handbook of Integrated Circuit Industry;2023-11-28
2. Strahlende Rekombination und optische Eigenschaften von GaP;Fortschritte der Physik;1975
3. Minority‐carrier lifetimes and luminescence efficiencies in nitrogen‐doped GaP;Applied Physics Letters;1973-03
4. Recombination Processes Responsible for the Room-Temperature Near-Band-Gap Radiation from GaP;Physical Review B;1973-01-15
5. Preparation of Single Crystals of III–V Compounds;Preparative Methods in Solid State Chemistry;1972
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