On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818333
Reference26 articles.
1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends
2. Nucleation of a new phase from the interaction of two adjacent phases: Some silicides
3. Towards implementation of a nickel silicide process for CMOS technologies
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5. Nucleation and diffusion during growth of ternary Co1−xNixSi2 thin films studied by complementary techniques in real time
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1. Effect of Co, Pd and Pt ultra-thin films on the Ni-silicide formation: investigating the sandwich configuration;Journal of Materials Science;2022-03
2. Phase transition of nickel silicide compounds and their electrical properties;Journal of Materials Science: Materials in Electronics;2021-05-28
3. Nickel silicide compounds investigation obtained at low and high temperatures;2019 International Semiconductor Conference (CAS);2019-10
4. Ternary silicide formation from Ni-Pt, Ni-Pd and Pt-Pd alloys on Si(100): Nucleation and solid solubility of the monosilicides;Acta Materialia;2017-05
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