Stability of a ferroelectric copolymer‐induced inversion layer in silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342625
Reference7 articles.
1. Induced inversion at a silicon ferroelectric copolymer interface
2. Ferroelectric properties of poly(vinylidene fluoride‐tetrafluoroethylene)
3. Velocity of surface carriers in inversion layers on silicon
4. Effects of crystal structure on piezoelectric and ferroelectric properties of copoly(vinylidenefluoride‐tetrafluoroethylene)
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Organic field-effect inversion-mode transistors and single-component complementary inverters on charged electrets;Journal of Applied Physics;2006
2. Inversion layer instability in a P(VDF/TriFE)/silicon transistor structure: Effect of oxygen exposure/polymer porosity, interface, and bulk trapping;Journal of Applied Physics;1992-12-15
3. Surface trap creation in polyvinylidene fluoride and poly(vinylidene fluoride/trifluoroethylene) on peeling from a silicon substrate;Journal of Applied Physics;1992-01-15
4. Increased surface voltage relaxation times in polyvinylidene fluoride films;Journal of Applied Physics;1992-01-15
5. Inversion induced in silicon by corona‐charged PVDF, P(VDF/TriFE), and P(VDF/ClTriFE);Journal of Applied Physics;1991-02-15
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