ZnSe Electroluminescent Device Exhibiting Switching and Memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654112
Reference3 articles.
1. Metal—Semiconductor Barrier Height Measurement by the Differential Capacitance Method—One Carrier System
2. The Growth and Electrical Characteristics of Epitaxial Layers of Zinc Selenide on p-Type Germanium
3. SWITCHING AND MEMORY IN ZnSe–Ge HETEROJUNCTIONS
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2. Dielectric response of poly(vinyl alcohol)–zinc selenide nanocomposite film;Japanese Journal of Applied Physics;2017-09-19
3. A new double‐heterostructure optoelectronic switching device using molecular‐beam epitaxy;Journal of Applied Physics;1986-01-15
4. The fabrication of light-emitting devices from hot-pressed ZnSe powders;Journal of Materials Science;1978-01
5. Electrical properties of the metal–ZnSe contact;Physica Status Solidi (a);1977-11-16
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