RESIDUAL ELECTRICALLY ACTIVE DEFECTS AFTER LATTICE REORDERING IN ION‐IMPLANTED SILICON
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653534
Reference6 articles.
1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
2. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering
3. DIRECT EVIDENCE OF DIVACANCY FORMATION IN SILICON BY ION IMPLANTATION
4. MINORITY CARRIER LIFETIME IN ION‐IMPLANTED AND ANNEALED SILICON
5. A Technique for Trap Determinations in Low‐Resistivity Semiconductors
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