Plasmon induced brightening of dark exciton in monolayer WSe2 for quantum optoelectronics-Reference-Cited by-同舟云学术

Plasmon induced brightening of dark exciton in monolayer WSe2 for quantum optoelectronics

Published:2019-05-20 Issue:20 Volume:114 Page:201101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Arora Ankit¹²³^ORCID,Dixit Tejendra¹³,Anil Kumar K. V.¹,Krishnan Sivarama¹,Lakshmi Ganapathi K.¹,Krishnan Ananth²^ORCID,Nayak Pramoda K.¹^ORCID,Ramachandra Rao M. S.¹³

Affiliation:

1. Department of Physics and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036, India

2. Centre for NEMS and Nano Photonics (CNNP), Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India

3. Nano Functional Materials Technology Centre, Indian Institute of Technology Madras, Chennai 600036, India

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5093664

Reference47 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Emerging Photoluminescence in Monolayer MoS2

3. Tightly Bound Excitons in MonolayerWSe2

4. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors

5. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

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