Optical detection of light‐ and heavy‐hole resonant tunneling inp‐type resonant tunneling structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106105
Reference14 articles.
1. Determination of Charge Accumulation and Its Characteristic Time in Double-Barrier Resonant Tunneling Structures Using Steady-State Photoluminescence
2. Photoluminescence characterization of vertical transport in double barrier resonant tunneling structures
3. Photoluminescence and space‐charge distribution in a double‐barrier diode under operation
4. Electrical and spectroscopic studies of space-charged buildup, energy relaxation and magnetically enhanced bistability in resonant-tunneling structures
5. Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields
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2. Optical Spectroscopy of Carrier Relaxation and Transport in III/V Semiconductor Tunneling Structures;Frontiers of Nano-Optoelectronic Systems;2000
3. Quantum optoelectronics;Physical Models of Semiconductor Quantum Devices;1999
4. Photoluminescence investigation of the tunnelling dynamics of holes and electrons in a p-type AlAs/GaAs resonant tunnelling structure;Microelectronic Engineering;1998-08
5. Photoluminescence of the electron-dressed confinedX−exciton in ann-type AlAs/GaAs resonant tunneling device;Physical Review B;1995-08-15
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