The electron resistance of a single skyrmion within ballistic approach

Author:

Useinov Artur1ORCID,Raj Ravish Kumar2ORCID,Verma Ravi Shankar2ORCID,Kumar Mohit2ORCID,Kaushik Brajesh Kumar2ORCID

Affiliation:

1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University 1 , Hsinchu 300093, Taiwan

2. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee 2 , Roorkee 247667, India

Abstract

An alternative way of skyrmion quasi-particle detection is simulated at low voltage bias. The point contact (PC), attached to the strip with a Néel-type skyrmion, can detect it with a higher efficiency than a magnetic tunnel junction. The method is based on detecting the skyrmion via the ballistic magnetoresistance ratio (BRR). PC's resistance with skyrmion significantly differs from the one without it. BRR is estimated in the framework of the point contact model for two directions of spin-polarized current: perpendicular to the transport direction (case 1) and along one (case 2). Skyrmion's size is assumed to be around 3.6 nm in diameter—smaller, or comparable, to the mean free path of electrons, allowing it to utilize the ballistic transport approach. As a result, resistance values for the considered Néel type skyrmion within the related size are estimated as 157 Ω for case 1 and 452.2 Ω for case 2 with optimistic BRR 101.3% and 291.7%, respectively. BRR for case 2 is higher due to the spin-filtering effect. The method also has the potential to detect the skyrmion type, or other magnetic nano structures such as bimeron, domain wall (DW), etc.

Publisher

AIP Publishing

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