Structural and vibrational properties of molecular beam epitaxy grown cubic (Al, Ga)N/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1345858
Reference21 articles.
1. Cubic-phase GaN light-emitting diodes
2. Electroluminescence of a cubic GaN/GaAs (001) p–n junction
3. Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (001) Substrates by MOVPE
4. Metalorganic vapor-phase epitaxy of cubic AlxGa1−xN alloy on a GaAs (100) substrate
5. Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy
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